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The IKWH30N65WR6XKSA1 is a TRENCHSTOP™ 5 WR6 IGBT with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes silicon technology in a TO-247-3-HCC through-hole package. The device supports a maximum collector-emitter voltage of 650 V and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a continuous collector current of 30 A at 100°C (60 A at 25°C), a saturation voltage of 1.45 V, and a total power dissipation of 83 W. Switching characteristics feature an off-energy of 0.38 mJ and on-energy of 0.82 mJ under hard switching conditions.
Verify the specific suffix XKSA1 against official Infineon documentation to confirm tape-and-reel or tube packaging details, as generic part numbers may vary. Confirm RoHS compliance status directly from the manufacturer's latest product qualification report. Ensure the procurement channel provides valid traceability documents matching the component marking.
Select this component when designing circuits requiring high switching frequencies up to 75 kHz. The integrated diode eliminates the need for external parallel components, reducing board space. Consider the 83 W power dissipation limit and ensure adequate thermal management for the TO-247-3-HCC package during continuous operation.
This component belongs to the TRENCHSTOP™ 5 WR6 family, designed specifically for high-frequency applications. Unlike standard IGBTs, the WR6 variant optimizes switching losses to support efficient operation in resonant topologies. The integration of the diode distinguishes it from single IGBT models like the IKW30N65EL5XKSA1.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing gate drive requirements before substituting with other TRENCHSTOP™ series devices.