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IL1207AT is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 4KV TRANS W/BASE 8-SOIC. Review the specifications below when checking this part for your BOM.
The IL1207AT is a single-channel optocoupler featuring a gallium arsenide infrared LED and a silicon NPN phototransistor with base connection. It operates within a temperature range of -55°C to 110°C and provides a minimum collector-emitter breakdown voltage of 70V. The device supports a maximum forward current of 60mA, a typical current transfer ratio of 25%, and a maximum dark power supply of 50nA. It offers an insulation voltage of 4000Vrms and is housed in an 8-SOIC package.
Verify component authenticity by checking for Vishay Semiconductor Opto Division branding and RoHS compliance markings on the SOIC-8 package. Ensure the part number matches the specific IL1207AT designation to confirm the 110°C rating and transistor output configuration. Cross-reference datasheet revisions to confirm current manufacturing status and lead times through authorized distributors.
Select this component when high-speed switching is required due to its base-connected phototransistor design. Choose the IL1207AT over standard variants if the application demands operation at elevated temperatures up to 110°C. Consider the 4000Vrms isolation voltage for safety-critical interfaces. Verify that the 60mA maximum forward current meets the input drive requirements of the controlling circuit.
The IL1207AT belongs to the IL1205AT/1206AT/1207AT/1208AT family of optocouplers from Vishay. These devices share similar architectural features, including the use of gallium arsenide LEDs and silicon NPN phototransistors. The family is designed for surface-mount assembly in SOIC packages, offering variations in pin configurations and electrical characteristics while maintaining consistent thermal and isolation performance profiles.
Consult official Vishay substitution guides for compatible alternatives. Direct replacements must maintain the 8-SOIC package, 4000Vrms isolation, and NPN phototransistor output type. Verify that any substitute component supports the 110°C operating temperature range and matches the base-connected transistor functionality for equivalent switching speeds.
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