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IL216AT is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 4KV TRANS W/BASE 8-SOIC. Review the specifications below when checking this part for your BOM.
The IL216AT is a single-channel optocoupler featuring a gallium arsenide infrared LED coupled to a silicon NPN phototransistor with base connection. It provides an isolation voltage of 4000Vrms and operates within a temperature range of -55°C to +100°C. The device supports a maximum forward current of 60 mA and a collector current of 100 mA, with a typical forward voltage of 1.5 V. Packaged in an 8-SOIC surface-mount format, it ensures reliable signal transmission across isolated circuits.
Verify the specific manufacturer datasheet for the IL216AT to confirm compliance with RoHS directives and lead times. Ensure that the 8-SOIC package dimensions align with your PCB footprint requirements. Cross-reference the electrical characteristics against system specifications to validate performance under intended operating conditions before finalizing procurement.
Select the IL216AT when high isolation voltage and fast response are critical. The integrated base connection improves switching performance compared to standard phototransistors. Consider the 8-SOIC package for surface-mount assembly needs. Evaluate thermal management requirements given the operational temperature range and power dissipation limits specified in the official documentation.
This component belongs to the IL21x series of low-input-current optocouplers manufactured by Vishay Semiconductor Opto Division. The series utilizes gallium arsenide LEDs paired with silicon NPN phototransistors. These devices are designed for applications demanding high reliability and robust isolation in compact surface-mount packages.
The IL215AT and IL217AT are part-specific substitutes within the same Vishay family. Verify pinout compatibility and electrical parameters such as isolation voltage and current transfer ratio before substitution.
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