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The IMB10AT110 is a dual pre-biased NPN transistor array manufactured by Rohm Semiconductor. It integrates two NPN transistors with built-in bias resistors in an SMT6 (SC-74/SOT-457) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a transition frequency of 250MHz. Internal resistors are specified as R1 = 2.2kΩ and R2 = 47kΩ. Maximum power dissipation is 300mW, and the saturation voltage is 300mV at 250µA base current and 5mA collector current.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance and MSL Level 1 status during sourcing. Check for obsolescence notices as the part may be restricted for new designs. Ensure packaging matches standard reel quantities for automated assembly processes.
Select this component when a dual NPN configuration with fixed bias ratios is required. Compare internal resistor values (2.2kΩ/47kΩ) against circuit drive requirements. Evaluate thermal performance within the 300mW dissipation limit. Consider pin compatibility if replacing existing discrete transistor pairs in SC-74 footprints.
This part belongs to Rohm's IMH10 series of complex transistors. It serves as a compact alternative to discrete NPN transistor pairs, reducing board space and assembly steps. The SMT6 package aligns with JEITA SC-74 standards, facilitating integration into modern consumer and industrial electronics requiring small form factors.
Direct substitutes include Toshiba RN1605TE85LF. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement maintains equivalent bias resistor values and switching characteristics for functional parity.