IMB11AT110

Overview

The IMB11AT110 is a dual pre-biased PNP digital transistor manufactured by Rohm Semiconductor. It integrates two PNP transistors with internal bias resistors in an SMT6 (SC-74, SOT-457) surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The device features a transition frequency of 250MHz and a maximum power dissipation of 300mW. Internal resistor values are specified as 10kΩ for both the base (R1) and emitter (R2). DC current gain is rated at a minimum of 30 at 5mA and 5V, with a saturation voltage of 300mV at 10mA collector current.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Compact SMT6 surface-mount packaging suitable for automated assembly

Applications

• General-purpose signal switching in consumer electronics
• Driver circuits for logic interfaces
• Switching elements in portable battery-powered devices

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) prior to storage and reflow soldering processes. Ensure ordering suffixes match required tape-and-reel specifications for production line integration.

Selection Notes

Select this component when dual PNP switching functionality with integrated biasing is required in a compact form factor. Consider the 50V voltage rating and 100mA current limit against load requirements. Evaluate the 10kΩ internal resistor values against drive source capabilities to ensure proper logic level interfacing.

Part Context

This part belongs to the IMB series of pre-biased bipolar junction transistors from Rohm Semiconductor. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The IMB11 variant specifically utilizes PNP polarity with standardized internal resistance configurations.

Replacement Considerations

RN2603(TE85L,F) by Toshiba Semiconductor and Storage is listed as a direct substitute.