IMB1AT110

Overview

The Rohm Semiconductor IMB1AT110 is a dual pre-biased PNP transistor array housed in an SMT6 (SOT-457) surface-mount package. It integrates two PNP transistors with internal biasing resistors, specifically R1 and R2 both rated at 22 kΩ. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Key electrical characteristics include a DC current gain (hFE) minimum of 56 at 5mA and 5V, a saturation voltage of 300mV max at 500µA base current and 10mA collector current, and a maximum power dissipation of 300mW. The component is classified as not recommended for new designs.

Feature Summary

• Integrates two PNP transistors with built-in biasing resistors to simplify circuit design
• Utilizes compact SMT6 surface-mount packaging for space-constrained applications
• Provides defined input resistance values to standardize interface requirements

Applications

• General-purpose switching circuits requiring dual PNP logic interfaces
• Pre-biased driver stages for low-current loads
• Digital-to-analog interface buffering in consumer electronics

Procurement Notes

Verify component status carefully before integration, as the IMB1AT110 is designated as not recommended for new designs. Confirm availability through authorized distributors, noting that stock levels may be limited or subject to order fulfillment delays. Ensure final assembly processes are compatible with the SMT6 package specifications and thermal handling requirements outlined in the official datasheet.

Selection Notes

Select this component only if existing designs require a dual PNP pre-biased configuration with 22kΩ internal resistors. Evaluate alternative active parts from the same family or competitors if long-term supply assurance is critical for future production runs. Compare pinout compatibility and electrical parameters against potential replacement devices to ensure seamless integration without schematic modifications.

Part Context

The IMB1AT110 belongs to the IMB1 series of complex transistors manufactured by Rohm Semiconductor. This series focuses on combining bipolar junction transistors with integrated passive components to reduce board space and assembly complexity. The specific model represents a dual PNP variant within this lineup, designed for applications where discrete resistor networks would otherwise increase footprint and cost.

Replacement Considerations

The Toshiba RN2603(TE85L,F) is identified as a direct substitute part number.