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The IMB2AT110 is a dual pre-biased NPN digital transistor from ROHM Semiconductor, housed in an SOT-457-6 surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 30mA. The device includes integrated base resistors with a typical value of 10 kOhms and a resistor ratio of 4.7. Key electrical parameters include a DC current gain (hfe) minimum of 68 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 300 mW. The output voltage is specified at 100 mV, with an emitter-base voltage of -3 V.
Verify the specific suffix and tape/reel specifications against the official ROHM datasheet to ensure compatibility with automated assembly processes. Confirm that the requested quantity aligns with standard manufacturing reel sizes. Cross-reference the RoHS compliance status with current environmental regulations applicable to your region before finalizing procurement orders.
Select this component when a dual NPN digital transistor with integrated biasing is required for compact designs. Ensure the 50V voltage rating and 30mA current capacity meet the load requirements. Consider the 250 MHz frequency limit for high-speed switching applications. Verify thermal management needs given the 300 mW power dissipation rating in the SOT-457 package.
The IMB2AT110 belongs to the IMH9A series of digital transistors manufactured by ROHM Semiconductor. This series focuses on providing pre-biased bipolar junction transistors in small surface-mount packages. The dual configuration allows for efficient implementation of logical operations or push-pull stages within minimal board area constraints.
Public confirmed substitute part numbers are not available in the provided documentation.