IMB3AT110

Overview

The IMB3AT110 is a dual pre-biased NPN digital transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in bias resistors within a compact SMT6 (SOT-457) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA, with a power dissipation rating of 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1mA and 5V, and a transition frequency of 250MHz. The typical base input resistance is 4.7kΩ, facilitating direct interface with logic circuits while reducing external component count.

Feature Summary

• Integrates dual NPN transistors with internal bias resistors to simplify circuit design
• Provides high-speed switching capability suitable for signal processing applications
• Utilizes a compact SMT6 surface-mount package for space-constrained layouts

Applications

• General-purpose signal switching in consumer electronics
• Logic level translation between different voltage domains
• Driver circuits for low-power loads in portable devices

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the supplier provides authentic components from authorized channels to guarantee reliability and traceability.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to minimize board space and part count. Compare the 4.7kΩ typical input resistance against other variants in the IMB3A series if specific drive currents differ. Ensure the 50V voltage rating and 100mA current capacity align with the target application's operational limits.

Part Context

The IMB3AT110 belongs to the IMB3A series of general-purpose dual digital transistors from ROHM. This series is designed to replace multiple discrete components, including transistors and resistors, thereby enhancing circuit reliability and reducing manufacturing complexity. It serves as a standard solution for embedded control and signal conditioning tasks.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors in SOT-457 packages with similar 50V ratings and comparable hFE characteristics. Verify pinout compatibility and resistor values to ensure functional equivalence without redesigning the surrounding circuitry.