IMB5AT108

Overview

The IMB5AT108 is a pre-biased dual PNP bipolar junction transistor array manufactured by Rohm Semiconductor. It integrates two PNP transistors with built-in biasing resistors within an SMT6 (SC-74/SOT-457) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 30mA per element. Key electrical characteristics include a minimum DC current gain (hFE) of 56 at 5mA/5V, a transition frequency of 250MHz, and a maximum power dissipation of 300mW. The component features a saturation voltage of 300mV at 10mA base current and includes integrated base and emitter resistors for simplified circuit design.

Feature Summary

• Integrates dual PNP transistors with pre-biased internal resistors to reduce external component count
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Compact SMT6 surface-mount packaging suitable for space-constrained designs
• Provides stable operation with defined saturation voltage and current gain characteristics

Applications

• General-purpose switching circuits requiring compact form factor
• Driver stages for logic interface applications
• Signal conditioning in consumer electronics
• Embedded system control interfaces

Procurement Notes

Verify the specific suffix 'T108' against official Rohm documentation to confirm resistor values and pinout configuration. Confirm RoHS compliance status and REACH registration details prior to integration. Check for NRND (Not Recommended for New Design) status implications on long-term supply availability. Ensure thermal management aligns with the 300mW power dissipation limit in the target application environment.

Selection Notes

Select this component when a dual PNP solution with integrated biasing is required to minimize board space. Compare hFE and saturation voltage requirements against alternative pre-biased arrays. Consider the 250MHz frequency limit for signal integrity. Evaluate the SC-74 package dimensions against PCB layout constraints. Verify that the 30mA current rating meets the load requirements of the driven circuitry.

Part Context

The IMB5AT108 belongs to Rohm's IMB5A series of pre-biased digital transistors. This family combines NPN or PNP transistors with internal resistors to simplify bias network design. The SMT6 package offers a small footprint compared to discrete solutions. Similar parts in the series may offer different resistor ratios or transistor polarities, such as NPN variants, while maintaining comparable voltage and current ratings.

Replacement Considerations

• IMH5AT108 (Dual NPN variant with similar package and voltage ratings)
• DTC124E equivalent single PNP transistor (requires external biasing components)

FAQ

What are the typical values of the integrated biasing resistors?

The integrated base resistor (R1) and emitter-base resistor (R2) are both typically 22 kOhms.

Is this component suitable for new designs?

No, the IMB5AT108 is marked as Not Recommended for New Design (NRND) due to potential minimum order quantity restrictions and lifecycle status.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.