IMB9AT110

Overview

The IMB9AT110 is a dual pre-biased NPN digital transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with internal biasing resistors within a compact SMT6 (SOT-457) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistor values are typically 10kΩ for the base resistor (R1) and 47kΩ for the emitter-base resistor (R2). Key electrical characteristics include a DC current gain (hFE) of at least 68 at 5mA/5V, a saturation voltage of 300mV at 250µA/5mA, and a transition frequency of 250MHz. Maximum power dissipation is rated at 300mW.

Feature Summary

• Dual NPN configuration with integrated biasing resistors simplifies circuit design by reducing component count.
• High-speed operation capability supported by a 250MHz transition frequency suitable for switching applications.
• Low saturation voltage ensures efficient power handling in saturated switch modes.
• Compact SMT6 packaging facilitates high-density surface-mount assembly.

Applications

• General-purpose switching circuits requiring dual independent control channels.
• Driver stages for logic interfaces and signal level shifting.
• High-frequency switching applications utilizing the specified transition frequency.

Procurement Notes

Verify the specific suffix AT110 to confirm the tape-and-reel packaging format and resistor tolerance specifications. Confirm RoHS compliance status through the official datasheet before integration. Ensure the ordering quantity aligns with standard factory reel sizes if bulk procurement is required. Cross-reference the manufacturer part number against authorized distributor catalogs to avoid counterfeit components.

Selection Notes

Select this component when a dual NPN solution with fixed biasing is preferred over discrete transistors to save board space. Verify that the 50V collector-emitter voltage exceeds the maximum circuit operating voltage. Check that the 100mA collector current meets the load requirements. Compare the 10kΩ base resistance against the driving source capabilities to ensure adequate input current drive.

Part Context

This part belongs to the IMB9 series of pre-biased transistors from ROHM Semiconductor. It is functionally similar to other dual NPN arrays in the same family but distinguished by its specific internal resistor ratios and packaging. It serves as a direct replacement for discrete dual-transistor configurations in compact designs.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors with matching 50V ratings and SOT-457 packages. Verify pinout compatibility and internal resistor values (R1/R2) to ensure equivalent circuit behavior without redesigning the bias network.