IMD10AMT1G

Overview

The IMD10AMT1G is a dual bias resistor transistor containing monolithic NPN and PNP silicon transistors with integrated bias resistor networks in an SC-74R package. It supports a maximum continuous collector current of 500 mA and withstands collector-emitter voltages up to 50 Vdc. The device features a minimum DC current gain (hFE) of 68 for the PNP section and 100 for the NPN section, with input resistors ranging from 7.0 kΩ to 13 kΩ. Power dissipation is rated at 285 mW total, and it operates within a junction temperature range up to 150 °C.

Feature Summary

• Integrates both NPN and PNP transistors with monolithic bias resistor networks in a single surface-mount package
• Supports high collector currents up to 500 mA for efficient switching applications
• AEC-Q101 qualified with NSV prefix for automotive and controlled manufacturing site requirements

Applications

• Automotive electronic systems requiring AEC-Q101 qualification
• General-purpose switching circuits utilizing complementary transistor pairs
• Driver stages for loads requiring combined NPN and PNP control logic

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard IMD10AMT1G designation differs from the NSVIMD10AMT1G variant, which indicates compliance with unique automotive site and control change requirements. Confirm that the required package style matches the application design, as pin configurations may vary between Style 20 and Style 21 layouts.

Selection Notes

Select this component when a design requires both NPN and PNP switching capabilities within a compact footprint. Ensure the application voltage does not exceed the 50 Vdc breakdown limits for either collector-base or collector-emitter terminals. Verify thermal management capabilities, as the total power dissipation is limited to 285 mW across both transistors in the SC-74R package.

Part Context

This device belongs to the IMD10AMT1G series of dual bias resistor transistors manufactured by onsemi. It utilizes silicon technology and is housed in the SC-74R (SOT-363) surface-mount package. The product line is designed to simplify circuit designs by integrating biasing resistors directly with the transistor structures, reducing external component count.

Replacement Considerations

Direct replacements must match the dual NPN/PNP configuration and SC-74R package. Verify electrical parameters such as the 50 Vdc voltage rating and 500 mA current capacity against the original design requirements.