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The IMD10AT108 is a dual digital transistor manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor within a single SMT6 (SC-74/SOT-457) surface-mount package. It operates with a maximum collector-emitter voltage of 50V and supports continuous collector currents of 100mA for the NPN and -100mA for the PNP device. The component includes integrated base resistors of 10kΩ and emitter-base resistors of 10kΩ for both transistors. Key electrical characteristics include a DC current gain (hFE) of at least 100 at 1mA/5V and 82 at -50mA/-5V, a transition frequency of 250MHz, and a power dissipation rating of 300mW.
Verify the specific suffix 'T108' corresponds to the required tape-and-reel packaging configuration when ordering. Confirm that the SC-74 package dimensions align with the target PCB land pattern. Ensure the 50V voltage rating meets the system's maximum operating conditions. Check RoHS compliance documentation if environmental regulations apply to the final assembly.
Select this component when a matched NPN/PNP pair is required for push-pull or differential stages. The 10kΩ internal resistor values are suitable for standard logic interface driving. Consider the 300mW power dissipation limit relative to ambient temperature derating curves. Verify that the 250MHz frequency response exceeds the application's signal bandwidth requirements.
This part belongs to the IMD16A series of complex transistors from ROHM Semiconductor. It shares the same physical package and general topology as other variants in the family but differs in internal resistor ratios and specific electrical parameters. The IMD10AT108 provides a balanced NPN/PNP configuration distinct from single-polarity or asymmetric resistor variants.
The DTC114E and DTB114E are listed as equivalent single-transistor alternatives for individual sections. For direct dual replacements, verify pin compatibility with other IMD series parts such as the IMD2AT108 or IMD3AT108, noting potential differences in internal resistance values.