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The IMD14T108 is a digital transistor array manufactured by Rohm Semiconductor, housed in an SMT6 (SOT-457) surface-mount package. It integrates two NPN transistors with built-in biasing resistors to simplify circuit design and reduce component count. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Key electrical characteristics include a transition frequency of 250MHz and a maximum power dissipation of 300mW. The unit operates within a junction temperature range up to 150°C and features a minimum DC current gain of 100 at 1mA and 5V.
Verify the specific ordering suffix to ensure correct tape-and-reel quantities and RoHS compliance status. Confirm that the component meets all required environmental standards for the target application. Cross-reference the manufacturer's latest datasheet for any updates on pin configurations or thermal ratings before finalizing procurement specifications.
Select this component when a compact solution for dual NPN switching with integrated biasing is required. Ensure the 100mA current rating and 50V voltage limits align with the load requirements. Consider the 300mW power dissipation capability relative to the expected thermal environment and PCB copper area for adequate heat spreading.
This part belongs to Rohm's IMD series of digital transistors, which are designed to replace discrete resistor-transistor combinations. The IMD14T108 specifically offers dual NPN configuration in a small outline package, providing a cost-effective and space-saving alternative to individual components in modern electronic assemblies.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing pinouts, electrical parameters, and package dimensions against potential alternatives from other manufacturers.