IMD16AT108

Overview

The IMD16AT108 is a dual pre-biased digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bipolar junction transistor within an SMT6 (SC-74/SOT-457) surface-mount package. It features a maximum collector-emitter voltage of 50V and continuous collector currents of 500mA for the NPN and 100mA for the PNP. The device includes internal base resistors of 100kΩ and 2.2kΩ, with a transition frequency of 250MHz and power dissipation rated at 300mW.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single compact surface-mount package
• Includes built-in biasing resistors to simplify circuit design and reduce component count
• Supports high-frequency operation with a transition frequency of 250MHz

Applications

• Differential amplifier circuits
• High-frequency crystal oscillator circuits
• Starter circuits

Procurement Notes

Verify the specific ordering suffix T108 against the manufacturer's current datasheet to confirm packaging details and tape-and-reel specifications. Ensure the selected variant matches the required input resistance values and polarity configuration for the target application design.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. The integrated resistors eliminate external biasing components, making it suitable for space-constrained designs requiring both NPN and PNP switching or amplification functions.

Part Context

This part belongs to the IMD16A series of complex transistors designed for general-purpose applications. It is distinct from automotive-grade variants and is not recommended for use in automotive equipment according to manufacturer guidelines.

Replacement Considerations

Public documentation identifies the UMZ1N as a similar specification replacement option. Verify pinout compatibility and electrical parameters before substitution.