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The IMD1AT108 is a digital transistor array manufactured by ROHM Semiconductor, housed in an SMT6 (SC-74/SOT-457) surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with built-in bias resistors. The device supports a maximum collector-emitter voltage of 50V for both polarities and provides continuous collector currents of 100mA for the NPN unit and -100mA for the PNP unit. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 1mA/5V, a transition frequency of 250MHz, and a power dissipation rating of 300mW. The typical input resistance is 100kΩ, and it operates within a temperature range up to +150°C.
Verify the specific suffix 'T108' to confirm the tape-and-reel packaging configuration. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the datasheet revision date to confirm parameter stability against legacy designs.
Select this part when a complementary pair of pre-biased transistors is required in a minimal space-constrained layout. Compare the 100kΩ input resistance against other series variants if specific base drive current limitations exist. Verify that the 300mW power dissipation rating accommodates the thermal environment of the final application.
This component belongs to the IMD1A series of complex transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly complexity. The SMT6 package allows for automated surface-mount placement, supporting high-volume manufacturing efficiency.
Publicly confirmed substitute part numbers for the IMD1AT108 were not identified in the provided source material. Designers should consult official manufacturer substitution guides or equivalent generic digital transistor arrays with matching pinouts and electrical ratings.