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The IMD23T108 is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It integrates one NPN and one PNP digital transistor within a single SOT-457 (SC-74) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical specifications include a transition frequency of 180MHz, a maximum power dissipation of 300mW, and a DC current gain minimum of 120 at 1mA and 6V. The component operates within a junction temperature range up to 150°C.
Verify the specific datasheet revision and RoHS compliance status directly with Rohm Semiconductor or authorized distributors before procurement. Confirm that the SOT-457 footprint matches the target PCB layout. Ensure the 100mA current limit and 50V voltage ratings align with the application's peak operational demands to prevent device failure.
Select this component when a mixed-polarity digital switch is required in a minimal footprint. The integrated bias resistors reduce external component count compared to discrete BJT solutions. Consider the 300mW thermal dissipation limit and ensure adequate PCB copper area for heat spreading if operating near maximum ratings.
This part belongs to Rohm's IMx series of pre-biased digital transistors. These devices are designed to replace multiple discrete components, including transistors and base resistors, in logic interface applications. The series offers various configurations, with the IMD23T108 specifically providing a complementary NPN/PNP pair for versatile signal handling.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs using equivalent dual pre-biased BJT arrays from other manufacturers only after thorough parameter matching.