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The IMD2AT108 is a general-purpose dual digital transistor manufactured by ROHM Semiconductor, featuring one NPN and one PNP pre-biased transistor within a single SMT6 (SC-74/SOT-457) surface-mount package. The device integrates internal base resistors of 22 kΩ for both the NPN and PNP elements. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical specifications include a DC current gain (hFE) minimum of 56 at 5 mA and 5 V, a saturation voltage (VCE(sat)) maximum of 300 mV at 500 µA base current and 10 mA collector current, and a transition frequency (fT) of 250 MHz. The component has a power dissipation rating of 300 mW and operates within a temperature range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm packaging type and reel specifications. Ensure that the selected variant matches the required tape-and-reel quantity or cut-tape availability for your assembly process. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair is needed in a minimal footprint. The 22 kΩ internal base resistors suit standard logic interfaces. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the 300 mW power dissipation limit for thermal management in dense PCB layouts.
The IMD2AT108 belongs to ROHM's IMD series of complex digital transistors. It serves as a direct replacement for discrete DTA124E (NPN) and DTC124E (PNP) combinations. The SMT6 package allows compatibility with standard automated surface-mount placement equipment, facilitating high-volume manufacturing efficiency.
Direct functional equivalents include the DTA124E and DTC124E used separately, though these require double the board space. Other compatible dual digital transistors from ROHM should be verified for pinout compatibility and identical electrical parameters such as hFE and VCE(sat).