SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IMD3AT108 is a dual complex transistor manufactured by ROHM Semiconductor, integrating one NPN and one PNP pre-biased transistor within an SMT6 (SC-74/SOT-457) surface-mount package. The device supports a supply voltage of 50V for the NPN section and -50V for the PNP section, with continuous collector currents of 100mA and -100mA respectively. It features typical input resistances of 1kΩ and emitter-base resistances of 10kΩ for both polarities. The component offers a maximum power dissipation of 300mW and operates at temperatures up to +150°C.
Verify the specific suffix T108 to confirm the tape-and-reel packaging format containing 3000 units per reel. Confirm RoHS compliance status through the manufacturer's official documentation before integration. Ensure the selected variant matches the required polarity configuration and resistance values for the target application design.
Select this component when a compact solution for complementary switching or amplification is required. The integrated resistor network reduces board space compared to discrete components. Verify that the 100mA current rating and 300mW power dissipation meet the thermal and load requirements of the specific circuit design.
This part belongs to the IMD3A series of complex transistors from ROHM Semiconductor. The series is characterized by its small SOT-457 footprint and dual-transistor architecture. It serves as a specialized alternative to discrete transistor pairs in space-constrained electronic designs requiring matched NPN/PNP characteristics.
The DTA114E and DTC114E are listed as equivalent single-part references for the respective NPN and PNP sections within the IMD3A family.