IMD6AT108

Overview

The IMD6AT108 is a dual pre-biased bipolar junction transistor array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within a compact SC-74 (SOT-457) surface-mount package. The device features a maximum collector-emitter voltage of 50V and continuous collector currents of 100mA for both polarities. Key electrical specifications include a transition frequency of 250MHz, a DC current gain minimum of 100 at 1mA/5V, and a saturated collector-emitter voltage of 300mV at low drive currents. Power dissipation is rated at 300mW, with an operating temperature range extending to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single dual configuration
• Includes built-in bias resistors to simplify circuit design and reduce component count
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Compact SC-74 package suitable for space-constrained surface-mount designs

Applications

• General-purpose signal switching circuits
• Logic level translation interfaces
• Driver stages for small-signal loads
• High-frequency switching applications

Procurement Notes

Verify the specific suffix AT108 to confirm the SC-74 package and tape-and-reel quantity. Ensure compatibility with RoHS3 standards if required by your manufacturing process. Cross-reference the internal part number against official ROHM documentation to avoid confusion with similar IMD series variants that may have different resistor values or polarity configurations.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull or differential configurations. The integrated bias resistors eliminate the need for external base resistors, reducing board space and assembly time. Consider the 300mW power dissipation limit and thermal management requirements for dense PCB layouts. Verify that the 50V voltage rating meets the system's operational headroom needs.

Part Context

This part belongs to the IMD6A series of digital transistors from ROHM. These devices are designed as replacements for discrete transistor-resistor networks. The IMD6AT108 specifically offers a complementary configuration, distinguishing it from single-polarity variants like the IMH6AT108 (dual NPN). It is part of ROHM's portfolio of pre-biased BJTs aimed at miniaturizing consumer and industrial electronics.

Replacement Considerations

• UMH2NTN
• RN1604(TE85L,F)