IMD8AT108

Overview

The IMD8AT108 is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bipolar junction transistor within a single SMT6 (SC-74/SOT-457) surface-mount package. It operates with a maximum collector-emitter voltage of 50V and supports continuous collector currents up to 100mA per transistor. The device features a typical transition frequency of 250MHz and a power dissipation rating of 300mW. Internal biasing resistors are configured at 10kΩ for the base input and 10kΩ for the emitter-base connection, providing a standard resistance ratio of 10.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact footprint
• Includes built-in biasing resistors to simplify circuit design
• Optimized for high-speed switching applications

Applications

• Differential amplifier circuits
• High-frequency crystal oscillator drivers
• Logic level shifting interfaces

Procurement Notes

Verify the specific suffix AT108 against the manufacturer's current datasheet to confirm pinout compatibility and internal resistor values. Ensure the ordering code matches the required tape-and-reel quantity specifications for automated assembly processes.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull or differential stages. The integrated resistors reduce board space compared to discrete solutions. Verify that the 50V breakdown voltage and 100mA current limits align with the target application's electrical requirements.

Part Context

This part belongs to the IMD16A series of complex transistors designed for general-purpose switching. It serves as a compact alternative to discrete transistor pairs, commonly used in consumer electronics and industrial control systems where space efficiency is critical.

Replacement Considerations

Publicly confirmed substitute part numbers for the IMD8AT108 were not found in the provided source material. Consult official cross-reference guides for potential equivalents.