IMH10AT110

Overview

The IMH10AT110 is a dual NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in biasing resistors in an SMT6 (SOT-457) surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA, with a maximum power dissipation of 300mW. Key electrical parameters include a transition frequency of 250MHz and a minimum DC current gain of 80 at 10mA and 5V. The saturation voltage is specified at 300mV under specific test conditions.

Feature Summary

• Integrates dual NPN transistors with internal biasing resistors for simplified circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Compact surface-mount packaging suitable for space-constrained layouts

Applications

• General-purpose switching circuits
• Driver circuits for logic interfaces
• High-frequency signal processing stages

Procurement Notes

Verify the component status before procurement as it may be marked as not recommended for new designs. Confirm availability through authorized distributors and check for alternative packages or pin-compatible substitutes if supply constraints exist. Ensure compliance with RoHS3 specifications for environmental standards.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a compact form factor. Consider the 50V voltage rating and 100mA current capacity against load requirements. Evaluate the 300mW power dissipation limit for thermal management in dense PCB layouts.

Part Context

This part belongs to the IMH10 series of complex transistors from ROHM Semiconductor. It is designed as a replacement for discrete resistor-transistor networks, offering reduced board space and assembly time. The SMT6 package provides a standardized footprint for automated placement processes.

Replacement Considerations

RN1605TE85LF is listed as a substitute option.