IMH11AT110

Overview

The IMH11AT110 is a dual NPN pre-biased digital transistor from ROHM Semiconductor, housed in an SMT6 (SC-74/SOT-457) surface-mount package. It integrates two NPN transistors with built-in bias resistors, each featuring a base resistance (R1) of 10 kΩ and an emitter resistance (R2) of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical specifications include a transition frequency (fT) of 250 MHz, a maximum power dissipation (Pd) of 300 mW, and a minimum DC current gain (hFE) of 30 at Ic=5mA, Vce=5V. The saturation voltage is rated at 300 mV max at Ib=500µA, Ic=10mA.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design.
• Optimized for high-speed switching applications with a 250 MHz transition frequency.
• Compact surface-mount packaging suitable for automated assembly processes.

Applications

• General-purpose signal switching in consumer electronics
• Driver circuits for low-power loads in industrial control systems
• Logic level shifting in embedded microcontroller interfaces

Procurement Notes

Verify the specific suffix 'T110' against the official ROHM datasheet to confirm resistor values and pinout configuration. Ensure the ordering code matches the required tape-and-reel quantity or cut-tape availability. Confirm RoHS compliance status and moisture sensitivity level (MSL) requirements prior to procurement to align with assembly standards.

Selection Notes

Select this component when a compact dual NPN solution with integrated biasing is required. The 10 kΩ resistor values are suitable for standard logic drive levels. Consider the 300 mW power dissipation limit for thermal management. Verify that the 50 V voltage rating exceeds the maximum circuit operating voltage under all conditions.

Part Context

This part belongs to the IMH1A series of pre-biased bipolar transistors. It serves as a space-saving alternative to discrete transistor-resistor networks. The SMT6 package provides a small footprint compared to through-hole alternatives, making it ideal for dense PCB layouts in portable devices.

Replacement Considerations

Publicly confirmed substitutes include the IMH1AT108. Verify equivalent electrical parameters such as VCEO, Ic, and resistor values before substitution.

FAQ

What are the internal resistor values for the IMH11AT110?

The device features a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 10 kΩ for each NPN transistor.

Is the IMH11AT110 available in a leaded package?

No, the IMH11AT110 is exclusively available in the SMT6 (SC-74/SOT-457) surface-mount package.