IMH14AT108

Overview

The IMH14AT108 is a dual NPN pre-biased transistor manufactured by ROHM Semiconductor, housed in an SMT6 (SC-74/SOT-457) surface-mount package. It features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA per element. The device integrates a 47kΩ base input resistor, achieving a typical transition frequency of 250MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1mA/5V and a maximum collector-emitter saturation voltage of 300mV at 1mA/10mA. Power dissipation is rated at 300mW, with a maximum operating junction temperature of +150°C.

Feature Summary

• Dual NPN configuration within a compact surface-mount footprint for space-constrained designs.
• Integrated 47kΩ base resistor simplifies circuit design by eliminating external biasing components.
• High-speed operation capability supported by a 250MHz transition frequency rating.

Applications

• General-purpose switching circuits requiring simplified bias networks.
• Driver stages for low-power loads or logic interface applications.
• High-frequency signal processing where fast switching speeds are required.

Procurement Notes

Verify component authenticity through authorized distribution channels to ensure compliance with RoHS3 standards. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Cross-reference datasheet parameters against application requirements to validate thermal and electrical performance limits under actual operating conditions.

Selection Notes

Select this component when a dual NPN pre-biased solution is needed in an SMT6 package. Ensure the 100mA collector current and 50V voltage ratings exceed peak circuit demands. Consider the 47kΩ internal resistance value for base drive compatibility. Verify that the 300mW power dissipation limit accommodates the expected thermal load in the final assembly.

Part Context

This part belongs to the IMH14 series of complex transistors from ROHM Semiconductor. It is categorized as a dual bipolar junction transistor array with integrated pre-biasing resistors. The SMT6 package provides a small form factor suitable for modern high-density PCB layouts, replacing discrete transistor and resistor combinations.

Replacement Considerations

Check for direct equivalents within the same manufacturer family or cross-brand alternatives offering identical pinouts and electrical specifications. Verify that substitute parts maintain the same 50V rating, 100mA current capacity, and 47kΩ base resistance to ensure functional compatibility without circuit redesign.

FAQ

What is the internal base resistance value for the IMH14AT108?

The device includes an integrated base input resistor with a nominal value of 47kΩ.

Is the IMH14AT108 suitable for new designs?

Manufacturer documentation indicates that this product is not recommended for new designs due to potential minimum order quantity restrictions.

What is the maximum collector-emitter saturation voltage?

The maximum Vce(sat) is specified as 300mV when measured at a collector current of 1mA and a base current of 10mA.