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The IMH15AT110 is a dual NPN pre-biased transistor from ROHM Semiconductor, housed in an SMT-6 (SOT-457) surface-mount package. It features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device integrates internal bias resistors with a typical input resistance of 10 kOhms and a resistor ratio of 4.7. Key electrical parameters include a DC current gain (hFE) minimum of 68 at 5 mA/5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 300 mW. The emitter-base voltage is rated at 1.4 V.
Verify the specific suffix 'T110' against the official ROHM datasheet to confirm the exact resistor values and pin configuration. Ensure the procurement source provides valid RoHS compliance documentation. Check for 'Not For New Designs' status if applicable to long-term supply chain planning. Confirm the package type matches the required footprint on the target PCB.
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. The 50 V rating and 100 mA current capacity suit low-to-medium power switching tasks. Consider the 250 MHz frequency limit for signal integrity in high-speed digital interfaces. Evaluate the thermal performance relative to the 300 mW dissipation limit in the chosen enclosure.
This part belongs to the IMH series of pre-biased transistors manufactured by ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistors to replace multiple discrete components. The IMH15AT110 specifically utilizes the SMT-6 package, offering a compact solution for modern electronics requiring reduced board space and simplified assembly processes.
The typical input resistance is 10 kOhms.
Yes, it supports a maximum operating frequency of 250 MHz.