IMH1AT110

IMH1AT110

$0.48
  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-

SKU:a252f070384a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6

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IMH1AT110

Overview

The IMH1AT110 is a dual NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates two independent NPN transistors with built-in bias resistors in a compact SMT6 (SOT-457) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistor values are specified as 22kΩ for both the base resistor (R1) and emitter-base resistor (R2). Key electrical characteristics include a transition frequency of 250MHz, a maximum power dissipation of 300mW, and a DC current gain (hFE) minimum of 56 at 5mA and 5V. The saturation voltage is rated at 300mV under specific test conditions.

Feature Summary

  • Integrates two independent NPN transistors with internal biasing resistors to simplify circuit design.
  • Utilizes a compact SMT6 surface-mount package to reduce mounting area and cost.
  • Provides high-speed switching capabilities suitable for general-purpose applications.

Applications

  • General-purpose switching circuits
  • Logic interface buffers
  • Driver circuits for low-power loads

Procurement Notes

Verify the complete part number including ordering suffixes such as TR or CT when sourcing components. Confirm RoHS compliance status and manufacturing origin through official distributor channels. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly. Cross-reference datasheet revisions to guarantee parameter consistency with existing designs.

Selection Notes

Select this component for applications requiring dual NPN switching with integrated biasing in a small footprint. Compare internal resistance values against target logic levels to ensure proper drive capability. Evaluate thermal performance based on the 300mW power dissipation limit within the SMT6 package constraints. Verify that the 50V voltage rating exceeds the maximum operating voltage in the target circuit.

Part Context

The IMH1AT110 belongs to the IMH1A series of complex transistors from ROHM Semiconductor. This series combines discrete transistor elements with bias networks to replace multiple individual components. The SMT6 packaging allows for automated surface-mount assembly, supporting high-volume production environments where board space efficiency is critical.

Replacement Considerations

Publicly documented equivalent parts include the PUMH1,115 from Nexperia USA Inc. Verify pinout compatibility and electrical parameter alignment before substitution.

IMH1AT110IMH1AT110
$0.48
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