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The IMH1AT110 is a dual NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates two independent NPN transistors with built-in bias resistors in a compact SMT6 (SOT-457) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistor values are specified as 22kΩ for both the base resistor (R1) and emitter-base resistor (R2). Key electrical characteristics include a transition frequency of 250MHz, a maximum power dissipation of 300mW, and a DC current gain (hFE) minimum of 56 at 5mA and 5V. The saturation voltage is rated at 300mV under specific test conditions.
Verify the complete part number including ordering suffixes such as TR or CT when sourcing components. Confirm RoHS compliance status and manufacturing origin through official distributor channels. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly. Cross-reference datasheet revisions to guarantee parameter consistency with existing designs.
Select this component for applications requiring dual NPN switching with integrated biasing in a small footprint. Compare internal resistance values against target logic levels to ensure proper drive capability. Evaluate thermal performance based on the 300mW power dissipation limit within the SMT6 package constraints. Verify that the 50V voltage rating exceeds the maximum operating voltage in the target circuit.
The IMH1AT110 belongs to the IMH1A series of complex transistors from ROHM Semiconductor. This series combines discrete transistor elements with bias networks to replace multiple individual components. The SMT6 packaging allows for automated surface-mount assembly, supporting high-volume production environments where board space efficiency is critical.
Publicly documented equivalent parts include the PUMH1,115 from Nexperia USA Inc. Verify pinout compatibility and electrical parameter alignment before substitution.