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The IMH20TR1G is a dual NPN pre-biased bipolar junction transistor (BJT) array in an SC-74R surface-mount package. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 30 V. The device includes integrated bias resistors with a standard input resistance of 1.54 kOhms. Key electrical characteristics include a low saturation voltage of 80 mV maximum at IC/IB = 50 mA/2.5 mA, ensuring efficient switching performance. Power dissipation is rated at 300 mW under specified conditions.
Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Ensure the SC-74R package dimensions match your PCB footprint requirements. Confirm that the thermal resistance values align with your system's heat dissipation strategy. Cross-reference the part number suffix to ensure it corresponds to the correct tape and reel configuration for your manufacturing line.
Choose this component when a dual NPN solution with built-in base resistors is required to reduce board space and component count. Consider the 30 V voltage rating and 600 mA current limit to ensure adequate headroom for your specific load conditions. Evaluate the thermal performance within the SC-74R package if operating near maximum power dissipation limits. Compare alternative single-transistor solutions if only one channel is needed to optimize cost.
This device belongs to onsemi's family of pre-biased bipolar transistors, designed to replace discrete resistor-transistor networks. These components integrate internal base resistors to simplify biasing requirements in digital and analog switching circuits. The SC-74R package provides a compact form factor suitable for high-density PCB layouts common in modern electronic devices.
The standard input resistance is 1.54 kOhms.
The maximum collector-emitter voltage (V(BR)CEO) is 30 V.