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The IMH23T110 is a dual NPN pre-biased transistor array manufactured by Rohm Semiconductor. It integrates two NPN transistors with built-in biasing resistors in an SMT6 (SOT-457) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 20V, a continuous collector current of 600mA, and a transition frequency of 150MHz. The device features a typical DC current gain of 820 at 50mA and 5V, with a maximum saturation voltage of 150mV under specified conditions. Power dissipation is rated at 300mW, and the internal base resistor value is 4.7kΩ.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions align with industry standards for surface-mount devices to prevent solderability issues during reflow processes.
Select this component when a dual NPN configuration with integrated biasing is required within a 20V voltage limit. Consider the 600mA current rating and 300mW power dissipation capabilities against thermal constraints. Verify that the 4.7kΩ internal resistance matches the specific drive requirements of the target application logic levels.
This part belongs to the IMH23 series of digital transistors from Rohm Semiconductor. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The SMT6 package offers a compact footprint suitable for dense PCB layouts in consumer electronics and industrial control systems.
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before replacing existing designs.