IMH23T110

IMH23T110

$0.54
  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-

SKU:e2ec39bda660 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:820 @ 50mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:150MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6

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IMH23T110

Overview

The IMH23T110 is a dual NPN pre-biased transistor array manufactured by Rohm Semiconductor. It integrates two NPN transistors with built-in biasing resistors in an SMT6 (SOT-457) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 20V, a continuous collector current of 600mA, and a transition frequency of 150MHz. The device features a typical DC current gain of 820 at 50mA and 5V, with a maximum saturation voltage of 150mV under specified conditions. Power dissipation is rated at 300mW, and the internal base resistor value is 4.7kΩ.

Feature Summary

  • Integrates dual NPN transistors with built-in biasing resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 150MHz transition frequency
  • Provides low saturation voltage for efficient power handling in compact packages

Applications

  • General-purpose switching circuits
  • Driver circuits for logic interfaces
  • Inverter configurations requiring integrated biasing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions align with industry standards for surface-mount devices to prevent solderability issues during reflow processes.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required within a 20V voltage limit. Consider the 600mA current rating and 300mW power dissipation capabilities against thermal constraints. Verify that the 4.7kΩ internal resistance matches the specific drive requirements of the target application logic levels.

Part Context

This part belongs to the IMH23 series of digital transistors from Rohm Semiconductor. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The SMT6 package offers a compact footprint suitable for dense PCB layouts in consumer electronics and industrial control systems.

Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before replacing existing designs.

IMH23T110IMH23T110
$0.54
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