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The IMH24T110 is a dual NPN pre-biased transistor array manufactured by Rohm Semiconductor. It integrates two NPN transistors with built-in bias resistors in a compact SMT6 (SOT-457) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 20V and a continuous collector current of 600mA. The device features a transition frequency of 150MHz and a DC current gain of at least 820 at 50mA. Power dissipation is rated at 300mW, with a typical base resistor value of 2.2kΩ.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance and check for the NRND status indicating it is not recommended for new designs. Ensure storage conditions adhere to moisture sensitivity level 1 requirements to prevent package damage during assembly.
Select this component when a dual NPN solution with integrated biasing is required for low-voltage applications. Consider the 20V rating and 600mA current limit against load requirements. Evaluate the 150MHz frequency response for suitability in high-speed switching tasks compared to standard discrete transistors.
This part belongs to the IMH24 series of pre-biased transistor arrays from Rohm Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly time. The specific model utilizes an SMT6 package, offering a balance between thermal performance and footprint size for consumer electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual NPN pre-biased transistors by matching pinout, voltage ratings, and current capabilities.