SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IMH2AT110 is a dual NPN pre-biased digital transistor from ROHM Semiconductor, housed in an SOT-457 (SMT6) surface-mount package. It integrates two NPN transistors with internal biasing resistors for simplified circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a resistor ratio of 4.7. Maximum power dissipation is rated at 300 mW, with a maximum operating frequency of 250 MHz. The saturation output voltage is specified at 100 mV.
Verify the specific suffix 'T110' against official ROHM documentation to ensure correct resistor values and pin configuration. Confirm that the SOT-457 package matches your PCB footprint requirements. Check RoHS compliance status directly on the manufacturer's datasheet before finalizing procurement decisions.
Select this component when a dual NPN solution with integrated biasing is required to minimize external components. Ensure the 50 V voltage rating and 100 mA current limit meet the load requirements. Consider the 300 mW power dissipation capability relative to thermal constraints in the target application environment.
This part belongs to the IMH2A series of complex digital transistors from ROHM. These devices are designed to replace multiple discrete components by combining transistors and resistors into a single package. The series offers various configurations for different voltage and current needs within the same footprint family.
Cross-reference with other dual NPN pre-biased transistors in the SOT-457 package. Verify equivalent VCEO, IC, and resistor values. Ensure compatibility with existing PCB layouts and thermal management strategies when substituting.