IMH3AT110

Overview

The IMH3AT110 is a dual NPN pre-biased digital transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with internal biasing resistors within an SMT6 (SOT-457) surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a typical base input resistance of 4.7 kOhms, a maximum power dissipation of 300mW, and a low saturation voltage of 300mV at specified test conditions.

Feature Summary

• Integrates dual NPN transistors with built-in biasing resistors to simplify circuit design
• Provides high-speed switching capability with a transition frequency of 250MHz
• Features low saturation voltage for efficient signal switching performance
• Utilizes compact SMT6 surface-mount packaging for space-constrained applications

Applications

• Signal switching circuits in portable electronic devices
• Driver circuits for logic level translation
• Switching elements in battery-powered equipment
• General-purpose digital interface buffering

Procurement Notes

Verify the specific suffix 'T110' during procurement to ensure the correct resistor ratio configuration, as variations exist within the IMH3 series. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications. Ensure ordering quantities align with standard reel sizes to avoid unnecessary cut-tape handling fees or minimum order constraints imposed by distributors.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 4.7kOhm base resistor value suits applications needing moderate drive currents. Consider the 50V rating and 100mA current limit for suitability in low-to-medium power switching tasks. Evaluate thermal management needs given the 300mW power dissipation limit in the small SMT6 package.

Part Context

The IMH3AT110 belongs to the IMH3A series of complex transistors from ROHM Semiconductor. This series combines bipolar junction transistors with internal resistors to replace multiple discrete components. The IMH3A line typically offers various resistor ratios to accommodate different input impedance requirements while maintaining consistent transistor characteristics and packaging standards across the family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' dual NPN digital transistors in the SOT-457 package.