IMH4AT110

IMH4AT110

$0.10
  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-

SKU:306216c5cd4b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6

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IMH4AT110

Overview

The IMH4AT110 is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SMT6 (SOT-457) surface-mount package. It integrates two NPN transistors with built-in biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 100mA per element. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 47 kOhms. It operates with a maximum power dissipation (Pd) of 300mW and supports a transition frequency (fT) of 250MHz, suitable for high-speed switching applications within a temperature range up to +150°C.

Feature Summary

  • Dual NPN configuration with integrated pre-biasing resistors for simplified drive circuits
  • Compact SMT6 (SOT-457) surface-mount packaging for space-constrained designs
  • High-speed switching capability with a transition frequency of 250MHz
  • Low saturation voltage characteristics for efficient power management

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for relays, solenoids, and small motors
  • Logic level shifting and buffer interfaces in microcontroller systems
  • Gate drive circuits for power MOSFETs or IGBTs

Procurement Notes

Verify the specific suffix 'T110' corresponds to the required resistor values (R1=4.7kΩ, R2=47kΩ) as variants exist within the IMH9A series. Confirm RoHS compliance status and moisture sensitivity level (MSL) ratings prior to assembly. Check for end-of-life notifications or recommended new designations if sourcing for long-term production runs. Ensure compatibility with standard SMT reflow profiles for the SOT-457 package.

Selection Notes

Select the IMH4AT110 when a dual NPN digital transistor with moderate current handling (100mA) and 50V breakdown is required. Compare input resistance values against other IMH series parts to ensure proper logic interface matching. Consider thermal dissipation limits in dense PCB layouts due to the small SMT6 footprint. Verify that the 250MHz transition frequency meets the switching speed requirements of the target application.

Part Context

The IMH4AT110 belongs to the ROHM IMH9A series of dual digital transistors. This series is designed to replace discrete resistor-transistor networks, offering reduced board space and improved reliability. Similar parts in the family include IMH1AT110, IMH3AT110, and IMH10AT110, which differ primarily in their internal resistor ratios and gain characteristics. The SMT6 package is common across this product line for compact surface-mount implementations.

Replacement Considerations

Potential substitutes include the IMH3AT110 or IMH1AT110 from ROHM, provided resistor values align with design needs. Cross-brand equivalents such as Nexperia PUMH1 or Toshiba RN16xx series may be considered after verifying pinout compatibility and electrical parameter margins.

IMH4AT110IMH4AT110
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