IMH5AT108

IMH5AT108

$0.53
  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-

SKU:eeadf4c6a7e5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6

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IMH5AT108

Overview

The Rohm Semiconductor IMH5AT108 is a dual NPN pre-biased transistor array housed in an SMT6 (SOT-457) surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element, with a total power dissipation rating of 300mW. The device integrates base resistors of 22kΩ and emitter-base resistors of 22kΩ for each transistor. Key electrical characteristics include a transition frequency of 250MHz, a DC current gain (hFE) minimum of 56 at 5mA/5V, and a saturation voltage of 300mV at 500µA base current and 10mA collector current.

Feature Summary

  • Integrates two NPN transistors with built-in biasing resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 250MHz transition frequency
  • Compact SMT6 surface-mount footprint suitable for space-constrained layouts

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • High-frequency signal processing

Procurement Notes

Verify the component status before integration, as the IMH5AT108 is marked as not recommended for new designs by major distributors. Confirm availability through authorized channels, noting that standard packaging quantities typically involve reels of 3,000 units. Ensure compliance with RoHS3 specifications and check for any specific supply constraints or end-of-life notifications from Rohm Semiconductor prior to finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a compact form factor. The 22kΩ internal resistors reduce external component count compared to discrete solutions. Consider the 100mA current limit and 300mW power dissipation against thermal requirements. Verify if the 50V voltage rating meets system needs and evaluate the 250MHz speed capability against signal frequencies.

Part Context

The IMH5AT108 belongs to Rohm's IMH5 series of complex transistors, which combine bipolar junction transistors with internal resistive networks. This series targets applications requiring simplified biasing and reduced board space. The SMT6 package provides a small outline transistor solution compatible with automated surface-mount assembly processes, distinguishing it from larger through-hole alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult Rohm Semiconductor documentation for potential cross-references or updated series replacements.

IMH5AT108IMH5AT108
$0.53
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