IMH6AT108

Overview

The IMH6AT108 is a dual NPN pre-biased transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with internal biasing resistors within an SMT6 (SC-74/SOT-457) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Key electrical characteristics include a transition frequency of 250MHz, a DC current gain (hFE) minimum of 68 at 5mA/5V, and a maximum power dissipation of 300mW. Each transistor features a base resistor (R1) and emitter-base resistor (R2) of 47kΩ.

Feature Summary

• Integrates dual NPN transistors with built-in biasing resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Compact SMT6 surface-mount packaging suitable for space-constrained designs

Applications

• General-purpose switching circuits
• Driver circuits for logic interfaces
• High-frequency signal processing stages

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the supplier provides authentic components from authorized distribution channels to guarantee performance reliability.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. Compare the 47kΩ internal resistance values against external resistor alternatives to determine if the pre-biased design meets impedance and drive requirements. Verify that the 100mA current rating and 50V voltage limits align with the target application's operational parameters.

Part Context

The IMH6AT108 belongs to the IMH6 series of complex transistors produced by ROHM Semiconductor. This series focuses on providing pre-biased dual transistor solutions in compact packages like SC-74. It serves as a replacement for discrete transistor networks, reducing board space and assembly complexity while maintaining consistent electrical characteristics across production batches.

Replacement Considerations

The UMH2NTN from ROHM Semiconductor is documented as a similar specification alternative. Verify pin compatibility and exact electrical parameter alignment before substitution.