IMH8AT108

IMH8AT108

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-

SKU:8521d8ddbce2 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL NPN SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6

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IMH8AT108

Overview

The IMH8AT108 is a dual NPN pre-biased transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with internal biasing resistors within an SMT6 (SC-74/SOT-457) surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Key electrical characteristics include a DC current gain (hFE) of at least 100 at 1mA and 5V, a saturation voltage of 300mV at 10mA, and a transition frequency of 250MHz. Power dissipation is rated at 300mW, with a maximum operating temperature of +150°C.

Feature Summary

  • Integrates two NPN transistors with built-in biasing resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 250MHz transition frequency
  • Compact SMT6 surface-mount package suitable for space-constrained designs

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for low-power digital logic interfaces
  • Signal conditioning in portable devices requiring compact discrete solutions

Procurement Notes

Verify the specific ordering suffix to confirm packaging type, such as tape-and-reel or cut-tape formats. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.

Selection Notes

Select this component when a dual NPN configuration with integrated base resistors is required to reduce external component count. Compare hFE and saturation voltage specifications against load requirements. Verify that the 300mW power dissipation rating accommodates thermal constraints within the target application environment.

Part Context

The IMH8AT108 belongs to the IMH series of complex transistors from ROHM Semiconductor. This series focuses on providing pre-biased transistor arrays in small packages to facilitate miniaturization in modern electronic devices. It serves as a functional alternative to discrete resistor-transistor combinations.

Replacement Considerations

UMH4NTN by Rohm Semiconductor is listed as a similar specification replacement. Verify pin compatibility and electrical parameters against the original design requirements before substitution.

IMH8AT108IMH8AT108

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