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The IMH9AT110 is a dual NPN pre-biased transistor from ROHM Semiconductor, housed in an SMT6 (SOT-457) surface-mount package. It integrates two NPN transistors with internal base and emitter resistors to simplify circuit design. Key electrical parameters include a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 10 kOhms and an emitter-base resistance of 47 kOhms. It operates up to a transition frequency of 250MHz with a maximum power dissipation of 300mW.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors prior to procurement. Ensure the component matches the required SMT6 package dimensions for PCB layout compatibility.
Select this component when a dual NPN solution with built-in biasing is required to reduce external component count. Verify that the 50V collector-emitter voltage rating meets the application's peak voltage requirements. Ensure the 100mA continuous current limit is sufficient for the load, and confirm that the 10kOhm base resistor value aligns with the driving source impedance.
The IMH9AT110 belongs to the IMH9A series of complex transistors manufactured by ROHM Semiconductor. This series focuses on integrating multiple discrete functions into small packages to enhance reliability and reduce board space. The part is specifically designed as a dual NPN pre-biased transistor, distinguishing it from single-transistor or different polarity variants within the broader IMH9 family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult ROHM Semiconductor's official replacement guide or contact technical support for qualified alternatives that match the SMT6 package and electrical specifications.