IMT18T110

Overview

The IMT18T110 is a dual PNP bipolar junction transistor array manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 12V and a continuous collector current of 500mA. The device operates with a transition frequency of 260MHz for the PNP elements and dissipates up to 300mW of power. Packaged in the SMT6 (SOT-457) surface-mount format, it supports a maximum operating temperature of +150°C.

Feature Summary

• Dual PNP configuration within a single compact package
• High-speed switching capability with 260MHz transition frequency
• Robust thermal performance supporting high-temperature operation

Applications

• General-purpose signal switching circuits
• Low-voltage logic interface drivers
• Small-signal amplification stages

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape-and-reel or cut-tape packaging format. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to final procurement decisions.

Selection Notes

Select this component when a dual PNP topology is required for space-constrained designs. The 12V rating suits low-voltage digital systems. Consider the SMT6 footprint for automated assembly processes requiring small outline transistors with integrated dual configurations.

Part Context

This part belongs to the IMT series of pre-biased and standard bipolar transistor arrays from ROHM. These components are designed to replace multiple discrete transistors, reducing board space and simplifying circuit design for applications requiring matched or independent dual transistor pairs.

Replacement Considerations

Cross-reference with other dual PNP SOT-457 devices such as the BC857B series or equivalent ROHM parts like the IMX9T110 if NPN polarity is acceptable. Verify pinout compatibility and voltage ratings before substitution.