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The IMT1AT110 is a dual PNP digital transistor manufactured by Rohm Semiconductor, housed in an SMT6 (SC-74/SOT-457) surface-mount package. It integrates two independent PNP bipolar junction transistors with built-in biasing resistors to simplify circuit design and reduce component count. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA, with a maximum power dissipation of 300mW. Key electrical parameters include a minimum DC current gain (hFE) of 56 at 5mA/5V and a typical base input resistance of 22kΩ. The unit operates within a junction temperature range up to 150°C.
Verify the exact ordering suffix and tape-and-reel quantity directly with authorized distributors or the manufacturer, as packaging configurations may vary. Confirm RoHS compliance status and lead times for the specific batch required. Ensure the selected variant matches the required pinout and thermal characteristics for the target application environment.
Select this component when a compact solution for dual PNP switching is required without external biasing resistors. Compare the 22kΩ internal base resistance against circuit drive capabilities to ensure adequate base current. Verify that the 50V voltage rating and 100mA current limit exceed the maximum operational stresses of the intended load to maintain reliability.
This part belongs to Rohm's IMT series of pre-biased transistors, which are designed to replace discrete BJT and resistor combinations. The SMT6 package offers a small footprint suitable for space-constrained portable devices. It serves as a direct functional replacement for other dual PNP digital transistors with similar voltage and current ratings in standard surface-mount designs.
Direct substitutes include other dual PNP digital transistors in SC-74 packages with comparable 50V ratings and ~22kΩ base resistors, such as the RN2603 from Toshiba. Verify pin compatibility and hFE specifications before substitution.