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The IMT4-7-F is a dual PNP small-signal surface-mount transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-26 package for SMD/SMT installation. The device features a maximum DC collector current of 50 mA and a collector-emitter voltage (Vceo) of 120 V. Additional electrical specifications include a collector-base voltage (Vcbo) of 130 V, an emitter-base voltage (Vebo) of 5 V, and a power dissipation (Pd) of 225 mW. The component has a gain-bandwidth product (Ft) of 140 MHz.
Verify the specific datasheet version and mechanical dimensions against the SOT-26 package standard before integration. Confirm that the 120 V rating and 50 mA current limits align with the target circuit requirements to ensure safe operating area compliance during procurement and design validation.
Select this component when a dual PNP transistor is required in a space-constrained SOT-26 footprint. It is suitable for applications demanding moderate voltage isolation and low-current switching capabilities. Ensure the thermal management strategy accounts for the 225 mW power dissipation limit under expected operating conditions.
This part belongs to Diodes Incorporated's portfolio of bipolar junction transistors designed for consumer electronics and industrial markets. As a dual PNP array, it consolidates two transistors into one package, reducing board space compared to discrete components while maintaining standard small-signal performance characteristics for general electronic designs.
Cross-reference with other dual PNP transistors in the SOT-26 package from various manufacturers. Verify pinout compatibility and ensure equivalent or superior voltage and current ratings are met to guarantee functional interchangeability without redesigning the PCB layout.