IMX4T108

Overview

The IMX4T108 is a dual NPN complex transistor manufactured by ROHM Semiconductor, housed in an SOT-457 (SMT6) surface-mount package. It features a collector-emitter voltage of 20 V and a continuous collector current of 50 mA per transistor. The device operates with a DC current gain ranging from 56 to 180 at specified test conditions. Power dissipation is rated at 300 mW, with a maximum operating temperature of +150°C. This component is designated as End-of-Life status.

Feature Summary

• Dual NPN configuration within a compact SOT-457 package
• Integrated bipolar transistor structure for high-frequency applications
• Surface-mount design suitable for automated assembly

Applications

• High-frequency circuit designs
• Crystal oscillator circuits
• Starter circuits

Procurement Notes

Verify the End-of-Life status before procurement planning. Confirm that existing inventory meets project timelines. Check for authorized distributor availability. Ensure compliance with RoHS requirements. Review replacement options if new production is required.

Selection Notes

Select this component only for legacy system maintenance or repair. Evaluate equivalent single transistors like the 2SC3837K for redesigns. Consider package compatibility during PCB layout updates. Assess thermal performance within the 300 mW dissipation limit. Verify voltage margins against the 20 V rating.

Part Context

The IMX4T108 belongs to the IMX series of complex transistors from ROHM Semiconductor. These devices integrate two NPN bipolar junction transistors into a single small outline package. The series targets applications requiring space-saving solutions for signal processing and oscillation circuits.

Replacement Considerations

The IMZ2A is listed as a similar specification part. However, it uses a different SOT-363 package. Verify pinout compatibility and physical footprint differences before substitution.