IMX8-7

IMX8-7

  • Description:TRANS 2NPN 120V 50MA SOT-26
  • Series:-

SKU:bdb9a1e4b935 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 120V 50MA SOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Transistor Type:2 NPN
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):120V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

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IMX8-7

Overview

The IMX8-7 is a dual NPN small-signal surface-mount transistor manufactured by Diodes Incorporated. It features an SOT-26-6 package configuration designed for compact circuit layouts. The component supports a maximum DC collector current of 50 mA and provides a collector-emitter voltage rating of 120 V. These electrical characteristics define its operational limits within low-power switching and amplification applications.

Feature Summary

  • Dual NPN transistor architecture integrated into a single surface-mount package
  • High voltage blocking capability suitable for signal processing circuits
  • Compact physical footprint optimized for space-constrained board designs

Applications

  • General-purpose signal switching in consumer electronics
  • Low-power amplification stages in industrial control systems
  • Logic interface buffering in computing hardware

Procurement Notes

Verify the specific suffix designation, as variants such as IMX8-7-F exist with identical electrical specifications but may differ in lead-free compliance or packaging standards. Confirm RoHS status directly with the manufacturer or authorized distributors to ensure alignment with environmental regulations for your target market. Cross-reference the datasheet revision date to guarantee compatibility with current design requirements.

Selection Notes

Select this component when a dual NPN configuration is required within a limited board area. The 120 V rating allows for operation in higher voltage domains compared to standard 50 V transistors. Ensure the 50 mA current limit meets the load requirements of the intended application without exceeding thermal dissipation constraints inherent to the SOT-26 package.

Part Context

Diodes Incorporated produces the IMX8-7 as part of its discrete semiconductor portfolio targeting automotive, industrial, and computing markets. This dual transistor solution consolidates two NPN junctions into one package, reducing component count and assembly complexity. It serves as a foundational building block for analog and digital signal conditioning tasks across various electronic product categories.

Replacement Considerations

The IMX8-7-F is a confirmed variant offering equivalent electrical performance. Verify pinout compatibility and package dimensions before substitution. No other direct cross-model substitutes are documented in public sources.

IMX8-7IMX8-7

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