IMZ1AT108

IMZ1AT108

$0.43
  • Description:TRANS NPN/PNP 50V 150MA SMT6
  • Series:-

SKU:1a0720597cbc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 150MA SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:180MHz, 140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6
  • Grade:-
  • Qualification:-

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IMZ1AT108

Overview

The IMZ1AT108 is a dual bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor, featuring one NPN and one PNP transistor within an SMT6 surface-mount package. It supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per device. The component exhibits a transition frequency of 180MHz for the NPN section and 140MHz for the PNP section, with a maximum power dissipation of 300mW. DC current gain (hFE) is specified at a minimum of 120 at 1mA and 6V. The saturation voltage is rated at 400mV for the NPN and 500mV for the PNP under specific test conditions.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a compact SMT6 footprint
  • Provides high-speed switching capabilities with transition frequencies up to 180MHz
  • Designed for low-voltage digital logic interfacing applications

Applications

  • Digital logic level shifting circuits
  • Switching applications in portable electronic devices
  • Complementary amplifier stages requiring matched polarity pairs

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity level specifications. Validate pinout compatibility during PCB layout finalization. Review datasheet revisions for any parameter updates before production release.

Selection Notes

Select this component when a matched NPN/PNP pair is required in minimal space. Consider the 150mA current limit and 300mW thermal constraints for circuit design. Evaluate the 180MHz/140MHz frequency response against signal requirements. Compare saturation voltages with alternative arrays for efficiency optimization.

Part Context

This part belongs to Rohm's discrete semiconductor product line focusing on small-signal BJT arrays. It serves as a compact solution for designs needing both NPN and PNP functionalities without separate component placement. The SMT6 package facilitates automated assembly processes.

Replacement Considerations

HN1B01FDW1T1G from onsemi is listed as a substitute. Verify electrical parameter alignment and pin configuration compatibility before implementation.

IMZ1AT108IMZ1AT108
$0.43
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