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The IMZ1AT108 is a dual bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor, featuring one NPN and one PNP transistor within an SMT6 surface-mount package. It supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per device. The component exhibits a transition frequency of 180MHz for the NPN section and 140MHz for the PNP section, with a maximum power dissipation of 300mW. DC current gain (hFE) is specified at a minimum of 120 at 1mA and 6V. The saturation voltage is rated at 400mV for the NPN and 500mV for the PNP under specific test conditions.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity level specifications. Validate pinout compatibility during PCB layout finalization. Review datasheet revisions for any parameter updates before production release.
Select this component when a matched NPN/PNP pair is required in minimal space. Consider the 150mA current limit and 300mW thermal constraints for circuit design. Evaluate the 180MHz/140MHz frequency response against signal requirements. Compare saturation voltages with alternative arrays for efficiency optimization.
This part belongs to Rohm's discrete semiconductor product line focusing on small-signal BJT arrays. It serves as a compact solution for designs needing both NPN and PNP functionalities without separate component placement. The SMT6 package facilitates automated assembly processes.
HN1B01FDW1T1G from onsemi is listed as a substitute. Verify electrical parameter alignment and pin configuration compatibility before implementation.