IPB107N20NAATMA1

$8.15

Description：MOSFET N-CH 200V 88A D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:37bfcc8e4a02 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPB107N20NAATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 88A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB107N20NAATMA1

Description：MOSFET N-CH 200V 88A D2PAK
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id：4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7100 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB107N20NAATMA1

IPB107N20NAATMA1

Single FETs, MOSFETs Overview

The IPB107N20NAATMA1 is an N-channel enhancement-mode power MOSFET from Infineon's OptiMOS™ 3 series, housed in a PG-TO263-3 (D2PAK) surface-mount package. It features a drain-source voltage of 200 V and a continuous drain current of 88 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 10.7 mΩ at VGS=10 V and ID=88 A. Key electrical parameters include a gate threshold voltage ranging from 2 V to 4 V, total gate charge up to 87 nC, and a thermal resistance junction-to-case of 0.5 K/W. It supports operation up to 175 °C and includes an integrated body diode with a forward voltage of 1.2 V max.

Single FETs, MOSFETs Feature Summary

Optimized for high-frequency switching and synchronous rectification applications
Features excellent gate charge and on-resistance product factor
Qualified according to AEC-Q101 automotive standards
Halogen-free construction compliant with IEC61249-2-21

Single FETs, MOSFETs Applications

High-frequency switching circuits
Synchronous rectification modules
Automotive power distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Ensure the procurement channel provides valid traceability for automotive-grade parts qualified under AEC-Q101 standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V N-channel MOSFET with low conduction losses is required. The PG-TO263-3 package offers robust thermal performance suitable for high-current applications. Consider the 10.7 mΩ maximum RDS(on) for efficiency calculations and verify that the 88 A continuous current rating aligns with the system's thermal management capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 3 family, designed for low on-resistance and fast switching. It serves as the TO263-3 packaged variant of the IPB107N20NA, distinct from the TO220-3 IPP110N20NA. The technology integrates planar and trench concepts to achieve superior performance metrics compared to standard planar MOSFETs.