IPD80R280P7ATMA1

Single FETs, MOSFETs Overview

The IPD80R280P7 is an N-channel enhancement-mode power MOSFET from Infineon's CoolMOS P7 series, utilizing superjunction technology. It features a maximum drain-source voltage of 800 V and a continuous drain current of 17 A at 25°C case temperature. The device has a maximum on-state resistance of 0.28 Ω at VGS=10V and Tj=25°C. Key electrical parameters include a typical gate charge of 36 nC, a threshold voltage of 3 V, and a total power dissipation of 101 W. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Best-in-class figure-of-merit combining low on-resistance with reduced output capacitance energy.
• Integrated Zener diode for enhanced ESD protection capabilities.
• Tight gate threshold voltage variation of ±0.5 V around the 3 V nominal value.
• Fully qualified according to JEDEC standards for industrial applications.

Single FETs, MOSFETs Applications

• Hard and soft switching flyback topologies for LED lighting systems.
• Low power chargers and adapters.
• Audio equipment and auxiliary power supplies.
• Industrial power supply designs.
• Power factor correction stages in consumer electronics and solar applications.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the datasheet appendix to ensure correct package and marking variants. Confirm that the application environment meets the specified thermal and voltage ratings. Check for any required automotive or specialized industrial certifications if applicable to the end product. Ensure proper handling procedures are followed due to the integrated ESD protection features.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and compact design are required for 800V superjunction applications. The tight threshold voltage variation supports easier parallel operation and consistent production yields. Consider the thermal characteristics and PCB footprint requirements for optimal heat dissipation in space-constrained designs.

Single FETs, MOSFETs Part Context

This transistor belongs to the CoolMOS P7 family, representing advanced superjunction technology developed by Infineon Technologies. It is designed to offer best-in-class performance metrics compared to previous generations. The PG-TO252-3 package provides a balance between power handling capability and surface-mount convenience for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for direct cross-references. Verify pinout compatibility and thermal resistance values before substituting. Ensure the replacement part meets or exceeds the 800V rating and 0.28 Ω on-resistance specifications.