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IPF017N08NF2SATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH 40. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPF017N08NF2SATMA1
- Description：TRENCH 40<-<100V PG-TO263-7
- Series：StrongIRFET™ 2
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：259A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 194µA
- Gate Charge (Qg) (Max) @ Vgs：186 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8700 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-7-14
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Single FETs, MOSFETs datasheet and documents for IPF017N08NF2SATMA1
Single FETs, MOSFETs Overview
The IPF017N08NF2SATMA1 is a StrongIRFET™ 2 N-channel power MOSFET from Infineon Technologies, housed in a PG-TO263-7 package. It features an 80 V drain-source voltage rating and a maximum on-state resistance of 1.7 mΩ at VGS=10V. The device supports a continuous drain current of 259 A at TC=25°C and a pulsed current of 1036 A. Key electrical parameters include a total gate charge of 124 nC and an output charge of 145 nC. It operates within a junction temperature range of -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Optimized for a wide range of applications with normal level N-channel technology
- 100% avalanche tested for enhanced reliability
- Lead-free plating compliant with RoHS standards
- Halogen-free construction according to IEC61249-2-21
Single FETs, MOSFETs Applications
- Power switching circuits requiring high efficiency
- Industrial motor control systems
- DC-DC converter designs
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging details. Ensure that the component matches the PG-TO263-7 footprint requirements for your PCB layout. Cross-reference the datasheet revision history to confirm you are using the latest technical specifications and thermal characteristics.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V N-channel MOSFET with low RDS(on) is required in a TO-263 form factor. Consider the 1.7 mΩ maximum resistance and 259 A continuous current capability for load matching. Evaluate the thermal resistance values against your system's cooling strategy to ensure operation remains within the specified -55°C to 175°C junction temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the IPF series of StrongIRFET™ 2 power transistors. It utilizes advanced trench technology to achieve low conduction losses. The PG-TO263-7 package provides robust mechanical stability and efficient heat dissipation through the exposed tab, suitable for surface-mount assembly on standard FR4 substrates.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 80 V rating, PG-TO263-7 package, and similar RDS(on) and ID specifications. Verify pinout compatibility and thermal performance before substitution.
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