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IPF019N12NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPF019N12NM6ATMA1
- Description：TRENCH >=100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for IPF019N12NM6ATMA1
Single FETs, MOSFETs Overview
The IPF019N12NM6ATMA1 is an OptiMOS™ 6 N-channel power MOSFET with a 120 V drain-source voltage rating. It features a maximum on-resistance of 1.9 mΩ at VGS=10V and ID=100A, and a continuous drain current of 254 A at TC=25°C. The device has a total gate charge of 113 nC and operates within a junction temperature range of -55°C to 175°C. Packaged in PG-TO263-7 (D²-PAK 7pin), it is fully qualified for industrial applications according to JEDEC standards.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching with very low reverse recovery charge
- High avalanche energy rating for robust operation
- Excellent gate charge and on-resistance figure of merit
- Lead-free plating compliant with RoHS and halogen-free
Single FETs, MOSFETs Applications
- Industrial motor drives
- DC-DC converters
- Synchronous rectification
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm tape-and-reel packaging requirements. Ensure that the component matches the exact PG-TO263-7 package outline and marking codes specified in the datasheet revision history. Confirm JEDEC qualification status for industrial application compliance before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high thermal stability up to 175°C. Consider the 1.9 mΩ RDS(on) for efficiency optimization in high-current paths. Evaluate the 1016 A pulsed current capability against peak load demands. Verify PCB footprint compatibility with the PG-TO263-7 package dimensions and thermal pad requirements.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 6 family of 120 V power transistors from Infineon Technologies. It utilizes advanced trench technology to achieve superior performance metrics compared to previous generations. The product line is designed to meet the rigorous demands of modern power electronics, offering improved switching characteristics and reliability for industrial and commercial power conversion systems.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other IPF019N12NM6 variants with different packaging suffixes such as ATMA1 for reel supply. Cross-reference pinouts and thermal resistance values when replacing with similar 120 V N-channel MOSFETs from other manufacturers to ensure electrical and mechanical compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
