Gate Driver IR2105S product image

IR2105S

$1.80
  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:ba404c3e426f Category: Brand:

  
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IR2105S is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for IR2105S

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:0.8V, 3V
  • Current - Peak Output (Source, Sink):210mA, 360mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):100ns, 50ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for IR2105S

IR2105S

Gate Driver Overview

The IR2105S is a high-voltage, high-speed power MOSFET and IGBT driver IC from Infineon Technologies. It features a half-bridge topology with two channels for independent high-side and low-side control. The device supports voltage ratings up to 600 V and operates with an input supply range of 10 V to 20 V. Key electrical parameters include a shutdown propagation delay of 150 ns and an turn-on propagation delay of 160 ns. Output capabilities provide a source current of 0.21 A and a sink current of 0.36 A. The component utilizes junction isolation (JI) for functional level shifting and is classified under the industrial quality grade.

Gate Driver Feature Summary

  • Provides independent high-side and low-side gate drive signals for half-bridge configurations.
  • Utilizes junction isolation technology for functional level shifting between logic and floating high-side domains.
  • Designed for driving high-frequency power MOSFETs and IGBTs in industrial applications.

Gate Driver Applications

  • High-power motor drives
  • Industrial power supplies
  • Inverter circuits

Gate Driver Procurement Notes

Verify the specific ordering suffix to ensure the correct package type and tape-and-reel configuration match the assembly requirements. Confirm that the industrial quality grade aligns with the operational temperature range and reliability standards required for the target application environment. Cross-reference the datasheet version to ensure all electrical characteristics remain consistent with the design specifications.

Gate Driver Selection Notes

Select the IR2105S when a half-bridge topology is required with moderate output current capabilities. Ensure the system voltage does not exceed the 600 V rating. Consider the propagation delays for timing-sensitive switching applications. Verify compatibility with the control logic levels and the bootstrap circuit design necessary for the high-side driver operation within the specified supply voltage range.

Gate Driver Part Context

The IR2105S belongs to the IR21xx series of high-voltage gate drivers manufactured by Infineon Technologies. This family is designed to provide robust performance for driving power switches in demanding environments. The component integrates the necessary level-shifting and drive circuitry into a single monolithic IC, simplifying the design of isolated power stages compared to discrete solutions.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for cross-reference data if alternative components are required.

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