Gate Driver IR2109 product image

IR2109

  • Description:IC GATE DRVR HALF-BRIDGE 8DIP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:20f8251cc7cb Category: Brand:

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IR2109 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8DIP. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for IR2109

  • Description:IC GATE DRVR HALF-BRIDGE 8DIP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:0.8V, 2.9V
  • Current - Peak Output (Source, Sink):200mA, 350mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):150ns, 50ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for IR2109

IR2109

Gate Driver Overview

The IR2109 is a high-voltage, high-speed power MOSFET and IGBT driver IC featuring a half-bridge topology. It supports supply voltages from 10 V to 20 V with a maximum rating of 20 V. The device provides independent control for high-side and low-side switches, offering a source output current of 0.2 A and a sink output current of 0.35 A. Key timing parameters include a turn-on propagation delay of 750 ns and a turn-off propagation delay of 200 ns. It operates within a temperature range of -40°C to 125°C and utilizes junction isolation for functional level shifting.

Gate Driver Feature Summary

  • Integrated half-bridge gate driver with independent high-side and low-side outputs
  • Functional level shift isolation for floating high-side drive applications
  • Under-voltage lockout (UVLO) mechanisms to prevent improper switching states
  • Industrial quality grade suitable for robust power electronics environments

Gate Driver Applications

  • Motor control systems requiring half-bridge configurations
  • Power management circuits utilizing high-side and low-side switching
  • Industrial power conversion stages driven by standard control ICs

Gate Driver Procurement Notes

Verify the specific package variant during ordering, as the IR2109 family includes both SOIC-8 and DIP-8 options. Confirm that the selected part meets industrial qualification standards if required for the target application. Ensure compatibility with the intended voltage levels and thermal requirements before finalizing procurement specifications.

Gate Driver Selection Notes

Select this component when a dedicated half-bridge driver with functional isolation is needed for voltages up to 600 V. Consider the 0.2 A source and 0.35 A sink currents against the gate charge requirements of the target MOSFETs or IGBTs. Evaluate the propagation delays against the switching frequency requirements of the specific power stage design.

Gate Driver Part Context

The IR2109 belongs to the IR2109 series of gate drivers designed for driving power MOSFETs and IGBTs in half-bridge topologies. It is distinct from other variants like the IR21094, which may offer different pin counts or current capabilities. This specific model focuses on providing reliable high-side and low-side drive signals with integrated protection features.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications carefully when considering alternative drivers from other manufacturers.

IR2109IR2109

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