Gate Driver IR2111STR product image

IR2111STR

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:30dd931353a7 Category: Brand:

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IR2111STR is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for IR2111STR

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:8.3V, 12.6V
  • Current - Peak Output (Source, Sink):250mA, 500mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):80ns, 40ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for IR2111STR

IR2111STR

Gate Driver Overview

The IR2111STR is a high-voltage, fast power MOSFET and IGBT driver IC manufactured by Infineon Technologies. It features a 600 V half-bridge topology with junction isolation for level shifting. The device provides a peak output current of 0.25 A source and 0.5 A sink. It operates within a supply voltage range of 10 V to 20 V. Key timing parameters include a maximum turn-on propagation delay of 750 ns and a turn-off delay of 150 ns. Rise and fall times are specified at 130 ns and 65 ns respectively. The component is housed in an 8-pin SOIC package and supports an operating temperature range from -40°C to +125°C.

Gate Driver Feature Summary

  • Integrated bootstrap diode capability for high-side gate drive
  • Junction isolated level shift channel for floating applications
  • Synchronous logic input compatible with standard CMOS outputs

Gate Driver Applications

  • Motor control systems
  • Power factor correction circuits
  • DC-to-AC inverters

Gate Driver Procurement Notes

Verify the specific suffix 'STR' corresponds to the tape-and-reel packaging variant rather than the tube-packaged 'SPBF' version. Confirm that the leaded status aligns with project requirements, as some variants may not be fully RoHS compliant. Ensure the supplier documentation explicitly references the Infineon datasheet for the IR2111 series to validate electrical characteristics against counterfeit components.

Gate Driver Selection Notes

Select this component when a robust half-bridge driver with integrated bootstrap functionality is required for voltages up to 600 V. The choice depends on the need for a single-channel solution driving both high-side and low-side switches. Consider the propagation delays and output current capabilities relative to the target MOSFET or IGBT gate charge requirements.

Gate Driver Part Context

This part belongs to the IR2111(S) & (PbF) series of gate drivers. It serves as a monolithic high-voltage integrated circuit designed specifically for driving power semiconductors. The series includes various package options such as PDIP and SOIC, catering to different manufacturing and thermal management needs within industrial power electronics.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

IR2111STRIR2111STR

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