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IR2131 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 28DIP. Review the specifications below when checking this part for your BOM.
The IR2131 is a high-voltage, high-speed power MOSFET and IGBT driver featuring three independent high-side and low-side referenced output channels. It supports supply voltages from 10 V to 20 V with peak output currents of 250 mA source and 500 mA sink. The device operates within a temperature range of -40°C to +150°C TJ. Key timing parameters include rise times of 80 ns and fall times of 40 ns, with maximum on/off delays of 1300 ns and 600 ns respectively. Logic inputs are compatible with CMOS and TTL standards at 0.8 V and 2.2 V thresholds.
Verify component authenticity through authorized Infineon distributors or certified partners. Check RoHS compliance status as variants may differ. Confirm package type matches design requirements. Review datasheet revisions for parameter updates. Ensure storage conditions meet moisture sensitivity level specifications before assembly.
Select the IR2131 for applications requiring isolated gate driving of multiple power switches. Consider thermal management due to power dissipation limits. Evaluate PCB layout for high dv/dt noise immunity. Match input logic levels to controller outputs. Verify voltage ratings exceed peak bus voltages in the target application.
The IR2131 belongs to the IR213x family of gate drivers designed for industrial power conversion. It replaces earlier generations with improved speed and integration. Variants include SOIC and PLCC packages. The device is widely used in legacy motor drive designs. Newer alternatives may offer higher current capabilities.
IR2131S and IR2131JPBF are package-specific variants of the same core function. Cross-reference pinouts when substituting between SOIC and PLCC packages. Verify electrical parameters match original design requirements. Check availability as some variants may be discontinued.
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