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IR2132STR is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 28SOIC. Review the specifications below when checking this part for your BOM.
The IR2132STR is a high-voltage, high-speed power MOSFET and IGBT driver manufactured by Infineon Technologies. It integrates three independent half-bridge drivers in a single package, designed for three-phase systems. The device operates with supply voltages between 10 V and 20 V. It features junction isolation for floating channels and includes undervoltage lockout protection. The component is housed in a 28-SOIC surface-mount package and supports both CMOS and TTL logic inputs.
Verify the specific suffix STRPBF or STR against the manufacturer's current datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering part number matches the required tape-and-reel packaging specifications. Cross-reference the component marking with official Infineon identification guides to prevent counterfeit substitution during procurement.
Select this component when designing three-phase topologies requiring integrated high-side and low-side driving capabilities. It is suitable for applications utilizing IGBTs or N-channel MOSFETs operating up to 600 V. Consider the 28-SOIC package constraints and thermal dissipation requirements relative to the expected load currents and switching frequencies.
This part belongs to the IR213x family of high-voltage gate drivers from Infineon. It shares architectural similarities with the IR2130 and IR2132S variants but differs in packaging and specific electrical characteristics. The series is widely used in industrial power conversion systems where compact integration of multiple driver channels is required.
The IR2132S is a documented variant within the same product family offering similar functionality. Verify pin compatibility and electrical parameter alignment before substituting. Other members of the IR213x series may serve as alternatives depending on specific voltage and current requirements.
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